Publications

[Extracted from DiVA, the publication database at KTH.]

Suresh, S.; Lourdudoss, S.; Landgren, G.; Baskar, K. (2010):
Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD.
Journal of Crystal Growth 312: 3151-3155 [Details]
Baskar, K.; Sundgren, P.; Douheret, O.; Landgren, G. (2003):
Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE.
Journal of Crystal Growth 248: 431-436 [Details]
Campi, R.; Berggren, J.; Buccieri, A.; Gotta, P.; Landgren, G.; Sarocchi, D.; Valenti, P. (2003):
Lateral confinement optimisation of 1300 nm InGaAlAsP/InGaAsP Fabry-Perot lasers.
[Conference paper] EWMOVPEX [Details]
Radamson, H.; Mohadjeri, B.; Menon, C.; Bentzen, A.; Grahn, J.; Landgren, G. (2002):
Growth of high frequency SiGe heterojunction bipolar transistors structures.
Physica Scripta T101: 45-48 [Details]
Radamson, H.; Bentzen, A.; Menon, C.; Landgren, G. (2002):
Observed critical thickness in selectively and non-selectively grown Si1-xGex layers on patterned substrates.
Physica Scripta T101: 42-44 [Details]
Menon, C.; Bentzen, A.; Landgren, G.; Radamson, H. (2002):
Defect density in non-selective and selective Si/SiGe structures.
Journal of Crystal Growth 237: 259-263 [Details]
Bowallius, O.; Anand, S.; Nordell, N.; Landgren, G.; Karlsson, S. (2001):
Scanning capacitance microscopy investigations of SiC structures.
Materials Science in Semiconductor Processing 4: 209-211 [Details]
Keiper, D.; Velling, P.; Prost, W.; Agethen, M.; Tegude, F.; Landgren, G. (2000):
Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient.
Japanese Journal of Applied Physics 39: 6162-6165 [Details]
Keiper, D.; Westphalen, R.; Landgren, G. (2000):
Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N-2 ambient.
Journal of Electronic Materials 29: 1398-1401 [Details]
Grahn, J.; Fosshaug, H.; Jargelius, M.; Jonsson, P.; Linder, M.; Malm, B.; Mohadjeri, B.; Pejnefors, J.; Radamson, H.; Sanden, M.; Wang, Y.; Landgren, G.; Östling, M. (2000):
A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget.
Solid-State Electronics 44: 549-554 [Details]
Vukusic, J.; Bengtsson, J.; Ghisoni, M.; Larsson, A.; Carlstrom, C.; Landgren, G. (2000):
Fabrication and characterization of diffractive optical elements in InP for monolithic integration with surface-emitting components.
Applied Optics 39: 398-401 [Details]
Campi, R.; Marcinkevicius, S.; Landgren, G. (2000):
Studies on the carrier transport in InGaAlAdP/InGaAsP quantum well structures emitting at 1.3 μm.
[Conference paper] Conference on Lasers and Electro-Optics Europe - Technical Digest 141 [Details]
Campi, R.; Patel, A.; Landgren, G. (2000):
MOVPE growth of strained 1300 nm InGaAlAsP/ InGaAsP quantum well structures.
[Conference paper] 12th International Conference on Indium Phosphide and Related Materials 380-383 [Details]
Bowallius, O.; Ankarcrona, J.; Hammar, M.; Anand, S.; Nilsson, S.; Landgren, G.; Radamson, H.; Tilly, L. (1999):
Scanning Capacitance Microscopy for Two-Dimensional Doping Profiling in Si- and InP-Based Device Structures.
Physica Scripta T 79: 163-166 [Details]
Bowallius, O.; Anand, S.; Hammar, M.; Nilsson, S.; Landgren, G. (1999):
Scanning capacitance microscopy investigations of buried heterostructure laser structures.
Applied Surface Science 144-145: 137-140 [Details]
Lourdudoss, S.; Rodríguez Messmer, E.; Kjebon, O.; Landgren, G. (1996):
Temporally resolved selective regrowth of InP around [110] and [110] mesas.
Journal of Electronic Materials 25: 389-394 [Details]
Kjebon, O.; Lourdudoss, S.; Hammarlund, B.; Lindgren, S.; Rask, M.; Ojala, P.; Landgren, G.; Broberg, B. (1991):
1.55 μm buried heterostructure laser via regrowth of semi-insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen.
Applied Physics Letters 59: 235-255 [Details]