[Extracted from DiVA, the publication database at KTH.]

Mogg, S.; Chitica, N.; Christiansson, U.; Schatz, R.; Asplund, C.; Hammar, M.; Sundgren, P. (2004):
Temperature sensitivity of the threshold current of long-wavelength InGaAs/GaAs VCSELs with large gain-cavity detuning.
IEEE Journal of Quantum Electronics 40: 453-462 [Details]
Sundgren, P.; Asplund, C.; Baskar, K.; Hammar, M. (2003):
Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy.
Applied Physics Letters 82: 2431-2433 [Details]
Asplund, C.; Sundgren, P.; Mogg, S.; Hammar, M.; Christiansson, U.; Oscarsson, V.; Runnström, C.; Odling, E.; Malmquist, J. (2002):
1260 nm InGaAs vertical-cavity lasers.
Electronics Letters 38: 635-636 [Details]
Asplund, C.; Hammar, M.; Sundgren, P. (2002):
Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-μm laser applications.
[Conference paper] Proc. 14th Indium Phosphide and Related Materials Conference, Stockholm, Sweden, 12-16 May 2002; [Details]
Salomonsson, F.; Asplund, C.; Sundgren, P.; Plaine, G.; Mogg, S.; Hammar, M. (2001):
Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers.
Electronics Letters 37: 957-958 [Details]
Sundgren, P.; Asplund, C.; Hammar, M.; Mogg, S.; Plaine, G. (2001):
Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3-μm lasers using metal-organic vapor-phase epitaxy.
[Conference paper] 14 maj 2001 - 18 maj 2001, Nara , Japan; Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On 563-566 [Details]