Publications

[Extracted from DiVA, the publication database at KTH.]

Andersson, T.; Liu, X.; Aggerstam, T.; Holmström, P.; Lourdudoss, S.; Thylen, L.; Chen, Y.; Hsieh, C.; Lo, I. (2009):
Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates.
Microelectronics Journal 40: 360-362 [Details]
Usman, M.; Nazir, A.; Aggerstam, T.; Linnarsson, M.; Hallén, A. (2009):
Electrical and structural characterization of ion implanted GaN.
Nuclear Instruments and Methods in Physics Research Section B 267: 1561-1563 [Details]
Azarov, A.; Hallén, A.; Jensen, J.; Aggerstam, T.; Lourdudoss, S. (2008):
High dose Fe implantation of gan - Damage build-up and dopant redistribution.
[Conference paper] 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, SWEDEN, JUL 02-06, 2007; PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY [Details]
Liu, X.; Aggerstam, T.; Holmström, P.; Lourdudoss, S.; Andersson, T. (2008):
Cracks in GaN/AlN multiple quantum well structures grown by MBE.
Journal of Physics, Conference Series 100: 042026 [Details]
Gautier, S.; Aggerstam, T.; Pinos, A.; Marcinkevicius, S.; Liu, K.; Shur, M.; O'Malley, S.; Sirenko, A.; Djebbour, Z.; Migan-Dubois, A.; Moudakir, T.; OLIgazzaden, A. (2008):
AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas.
Journal of Crystal Growth 310: 4927-4931 [Details]
Ougazzaden, A.; Rogers, D.; Teherani, F.; Moudakir, T.; Gautier, S.; Aggerstam, T.; Saad, S.; Martin, J.; Djebbour, Z.; Durand, O.; Garry, G.; Lusson, A.; McGrouther, D.; Chapman, J. (2008):
Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates.
Journal of Crystal Growth 310: 944-947 [Details]
Ougazzaden, A.; Moudakir, T.; Aggerstam, T.; Orsal, G.; Saivestrini, J.; Gautier, S.; Sirenko, A. (2008):
GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE.
[Conference paper] 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, NV, SEP 16-21, 2007; PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS 1565-1567 [Details]
Aggerstam, T. (2008):
Gallium nitride templates and its related materials for electronic and photonic devices.
Doctoral thesis, comprehensive summary [Details]
Holmström, P.; Liu, X.; Uchida, H.; Aggerstam, T.; Kikuchi, A.; Kishino, K.; Lourdudoss, S.; Andersson, T.; Thylén, L. (2007):
Intersubband photonic devices by group-III nitrides.
[Conference paper] Optoelectronic Materials and Devices II; Wuhan; 2 November 2007 through 5 November 2007; Optoelectronic Materials And Devices II N7821-N7821 [Details]
Aggerstam, T.; Andersson, T.; Holmström, P.; Jänes, P.; Liu, X.; Lourdudoss, S.; Thylén, L. (2007):
GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 mu m intersubband absorption.
[Conference paper] Quantum Sensing and Nanophotonic Devices IV; San Jose, CA; 22 January 2007 through 25 January 2007; Quantum Sensing and Nanophotonic Devices IV 64791E-1-64791E-12 [Details]
Ougazzaden, A.; Gautier, S.; Aggerstam, T.; Martin, J.; Bouchaour, M.; Baghdadli, T.; Saad, S.; Lourdudoss, S.; Maloufi, N.; Djebbour, Z.; Jomard, F. (2007):
Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications.
[Conference paper] Conference on Quantum Sensing and Nanophotonic Devices IV, San Jose, CA, JAN 22-25, 2007, SPIE; Quantum Sensing and Nanophotonic Devices IV G4791-G4791 [Details]
Aggerstam, T.; Pinos, A.; Marcinkevicius, S.; Linnarsson, M.; Lourdudoss, S. (2007):
Electron and hole capture cross-sections of Fe acceptors in GaN:Fe epitaxially grown on sapphire.
Journal of Electronic Materials 36: 1621-1624 [Details]
Liu, X.; Aggerstam, T.; Jänes, P.; Holmström, P.; Lourdudoss, S.; Thylén, L.; Andersson, T. (2007):
Investigation of intersubband absorption of GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy.
Journal of Crystal Growth 301: 301-302 [Details]
Lo, I.; Tsai, J.; Gau, M.; Chen, Y.; Chang, Z.; Wang, W.; Chiang, J.; Wang, K.; Chen, C.; Aggerstam, T.; Lourdudoss, S. (2006):
Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect.
Physical Review B. Condensed Matter and Materials Physics 74: 245325 [Details]
Aggerstam, T.; Sjödin, M.; Lourdudoss, S. (2006):
AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE.
[Conference paper] 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, GERMANY, AUG 28-SEP 02, 2005; Physica Status Solidi C - Current Topics in Solid State Physics 2373-2376 [Details]
Aggerstam, T.; Lourdudoss, S.; Radamson, H.; Sjödin, M.; Lorenzini, P.; Look, D. (2006):
Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire.
Thin Solid Films 515: 705-707 [Details]
Holmström, P.; Matsui, S.; Uchida, H.; Nakazato, T.; Jänes, P.; Aggerstam, T.; Kikuchi, A.; Kishino, K. (2005):
Electroabsorption modulator based on intersubband transitions in (Al)(Ga)N step quantum wells considering intermixing.
[Conference paper] 8th International Conference on Intersubband Transitions in Quantum Wells (ITQW’2005); [Details]