Publications

[Extracted from DiVA, the publication database at KTH.]

Pougeoise, E.; Gilet, P.; Grosse, P.; Grenouillet, L.; Chelnokov, A.; Gerard, J.; Bouillard, J.; Lerondel, G.; Blaize, S.; Vilain, S.; Bachelot, R.; Royer, P.; Hamelin, R.; Berggren, J.; Sundgren, P.; Hammar, M. (2009):
Experimental study of the lasing modes of 1.3-ÎŒm highly strained InGaAs-GaAs quantum-well oxide-confined VCSELs.
IEEE Photonics Technology Letters 21: 377-379 [Details]
Gilet, P.; Pougeoise, E.; Grenouillet, L.; Grosse, P.; Olivier, N.; Poncet, S.; Chelnokov, A.; Gerard, J.; Stevens, R.; Hamelin, R.; Hammar, M.; Berggren, J.; Sundgren, P. (2007):
1.3 μm VCSELs - InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material.
[Conference paper] 11th Vertical Cavity Surface Emitting Lasers Conference, San Jose, CA, JAN 24-25, 2007; Vertical - Cavity Surface - Emitting Lasers XI F4840-F4840 [Details]
Pougeoise, E.; Gilet, P.; Grosse, P.; Poncet, S.; Chelnokov, A.; Gérard, J.; Bourgeois, G.; Stevens, R.; Hamelin, R.; Hammar, M.; Berggren, J.; Sundgren, P.; Vilain, S.; Bouillard, J.; Lerondel, G.; Bachelot, R.; Royer, P. (2006):
Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs.
[Conference paper] Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, 3-5 April 2006, Strasbourg, France; Proc SPIE Int Soc Opt Eng [Details]
Pougeoise, E.; Gilet, P.; Grosse, P.; Poncet, S.; Chelnokov, A.; Gérard, J.; Bourgcois, G.; Stevens, R.; Hamelin, R.; Hammar, M.; Berggren, J.; Sundgren, P. (2006):
1.3 ÎŒm strained InGaAs quantum well VCSELs - Operation characteristics and transverse modes analysis.
[Conference paper] Conference on Vertical-Cavity Surface-Emitting Lasers X. San Jose, CA. JAN 25-26, 2006; Vertical-Cavity Surface-Emitting Lasers X 13207-13207 [Details]
Sundgren, P.; Berggren, J.; Goldman, P.; Hammar, M. (2005):
Highly strained InGaAs/GaAs multiple quantum-wells for laser applications in the 1200-1300-nm wavelength regime.
Applied Physics Letters 87: 071104 [Details]
Sundgren, P. (2005):
Development of 1.3-μm GaAs-based vertical-cavity surface-emitting lasers.
Doctoral thesis, comprehensive summary [Details]
Bernabé, S.; Stevens, R.; Volpert, M.; Hamelin, R.; Rossat, C.; Berger, F.; Lombard, L.; Kopp, C.; Berggren, J.; Sundgren, P.; Hammar, M. (2005):
Highly integrated VCSEL-based 10Gb/s miniature optical sub-assembly.
[Conference paper] 55th Electronic Components and Technology Conference, ECTC; Lake Buena Vista, FL; 31 May 2005 through 4 June 2005; Proceedings - Electronic Components and Technology Conference 1333-1338 [Details]
Hammar, M.; von Würtemberg, R.; Sundgren, P.; Berggren, J.; Larsson, A.; Söderberg, E.; Modh, P.; Gustavsson, J.; Ghisoni, M.; Chitica, N. (2005):
1.3-mu m InGaAs vertical-cavity surface-emitting lasers.
[Conference paper] 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society Location: Sydney, AUSTRALIA Date: OCT 22-28, 2005; 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) 396-397 [Details]
Chacinski, M.; Schatz, R.; Kjebon, O.; Hammar, M.; Marcks von Würtemberg, R.; Mogg, S.; Sundgren, P.; Berggren, J. (2005):
Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics.
Applied Physics Letters 86: 211109-1-211109-3 [Details]
Mogg, S.; Chitica, N.; Christiansson, U.; Schatz, R.; Asplund, C.; Hammar, M.; Sundgren, P. (2004):
Temperature sensitivity of the threshold current of long-wavelength InGaAs/GaAs VCSELs with large gain-cavity detuning.
IEEE Journal of Quantum Electronics 40: 453-462 [Details]
Marcks von Würtemberg, R.; Sundgren, P.; Berggren, J.; Hammar, M.; Ghisoni, M.; Ödling, E.; Oscarsson, V.; Malmquist, J. (2004):
1.3 μm InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation.
Applied Physics Letters 85: 4851-4853 [Details]
Olsson, F.; Mion, G.; Sun, Y.; Sundgren, P.; Baskar, K.; Armani, N.; Hammar, M.; Lourdudoss, S. (2004):
Selective area growth of GaInNAs/GaAs by MOVPE.
Physica. E, Low-Dimensional systems and nanostructures 23: 347-351 [Details]
Chacinski, M.; Berggren, J.; Schatz, R.; Kjebon, O.; Hammar, M.; Sundgren, P.; Marcks von Würtemberg, R. (2004):
1.3 um InGaAs VCSELs: Influence of the Large Gain-Cavity Detuning on the Modulation and Static Performance.
[Conference paper] European Conference on Optical Communication; Proc. of 30th European Conference on Optical Communication 2004 [Details]
Marcks von Würtemberg, R.; Sundgren, P.; Berggren, J.; Hammar, M.; Ghisoni, M.; Oscarsson, V.; Ödling, E.; Malmquist, J. (2004):
Fabrication and performance of 1.3-μm vertical cavity surface emitting lasers with InGaAs quantum well active regions grown on GaAs substrates.
Proceedings of SPIE, the International Society for Optical Engineering 5443: 229-239 [Details]
Sundgren, P.; Hammar, M.; Berggren, J. (2003):
Optimization of highly strained InGaAs quantum wells for 1.3-μm vertical-cavity lasers.
[Conference paper] Proc. 10th European Workshop on Metalorganic Vapour Phase Epitaxy, Lecce, Italy, 8-11 June 2003 247-250 [Details]
Sundgren, P.; Asplund, C.; Baskar, K.; Hammar, M. (2003):
Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy.
Applied Physics Letters 82: 2431-2433 [Details]
Sundgren, P.; Marcks von Würtemberg, R.; Berggren, J.; Hammar, M.; Ghisoni, M.; Oscarsson, V.; Ödling, E.; Malmquist, J. (2003):
High-performance 1.3-μm InGaAs vertical cavity surface emitting lasers.
Electronics Letters 39: 1128-1129 [Details]
Asplund, C.; Sundgren, P.; Mogg, S.; Hammar, M.; Christiansson, U.; Oscarsson, V.; Runnström, C.; Odling, E.; Malmquist, J. (2002):
1260 nm InGaAs vertical-cavity lasers.
Electronics Letters 38: 635-636 [Details]
Asplund, C.; Hammar, M.; Sundgren, P. (2002):
Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-μm laser applications.
[Conference paper] Proc. 14th Indium Phosphide and Related Materials Conference, Stockholm, Sweden, 12-16 May 2002; [Details]
Salomonsson, F.; Asplund, C.; Sundgren, P.; Plaine, G.; Mogg, S.; Hammar, M. (2001):
Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers.
Electronics Letters 37: 957-958 [Details]
Sundgren, P.; Asplund, C.; Hammar, M.; Mogg, S.; Plaine, G. (2001):
Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3-μm lasers using metal-organic vapor-phase epitaxy.
[Conference paper] 14 maj 2001 - 18 maj 2001, Nara , Japan; Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On 563-566 [Details]