[Extracted from DiVA, the publication database at KTH.]

Salomonsson, F.; Asplund, C.; Sundgren, P.; Plaine, G.; Mogg, S.; Hammar, M. (2001):
Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers.
Electronics Letters 37: 957-958 [Details]
Sundgren, P.; Asplund, C.; Hammar, M.; Mogg, S.; Plaine, G. (2001):
Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3-μm lasers using metal-organic vapor-phase epitaxy.
[Conference paper] 14 maj 2001 - 18 maj 2001, Nara , Japan; Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On 563-566 [Details]