[Extracted from DiVA, the publication database at KTH.]

Wang, Q.; Rajabi, M.; Karim, A.; Almqvist, S.; Bakowski, M.; Savage, S.; Jan, Y.; Göthelid, M.; Yu, S.; Gustafsson, O.; Hammar, M.; Asplund, C. (2013):
Surface states characterization and simulation of type-II In(Ga)Sb quantum dot structures for processing optimization of LWIR detectors.
[Conference paper] 39th Infrared Technology and Applications; Baltimore, MD; United States; 29 April 2013 through 3 May 2013; Proceedings of SPIE, Infrared Technology and Applications XXXIX 870433 [Details]
Karim, A.; Gustafsson, O.; Savage, S.; Wang, Q.; Almqvist, S.; Asplund, C.; Hammar, M.; Jan, Y. (2013):
In(Ga)Sb/InAs quantum dot based IR photodetectors with thermally activated photoresponse.
[Conference paper] 39th Infrared Technology and Applications; Baltimore, MD; United States; 29 April 2013 through 3 May 2013; Proceedings of SPIE 8704, Infrared Technology and Applications XXXIX 870434 [Details]
Gustafsson, O.; Karim, A.; Asplund, C.; Wang, Q.; Zabel, T.; Almqvist, S.; Savage, S.; Andersson, J.; Hammar, M. (2013):
A performance assessment of type-II interband In0.5Ga0.5Sb QD photodetectors.
Infrared physics & technology 61: 319-324 [Details]
Gustafsson, O.; Karim, A.; Wang, Q.; Berggren, J.; Asplund, C.; Andersson, J.; Hammar, M. (2013):
Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots.
Infrared physics & technology 59: 89-92 [Details]
Gustafsson, O. (2013):
Type-II interband quantum dot photodetectors.
Doctoral thesis, comprehensive summary [Details]
Wang, Q.; Li, X.; Zhang, A.; Almqvist, S.; Karim, A.; Noharet, B.; Andersson, J.; Göthelid, M.; Yu, S.; Gustafsson, O.; Hammar, M.; Asplund, C.; Gothelid, E. (2012):
Analysis of surface oxides on narrow bandgap III-V semiconductors leading towards surface leakage free IR photodetectors.
Proceedings of SPIE, the International Society for Optical Engineering 8353: 835311 [Details]
Karim, A.; Gustafsson, O.; Hussain, L.; Wang, Q.; Noharet, B.; Hammar, M.; Anderson, J.; Song, J. (2012):
Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE.
[Conference paper] Optical Sensing and Detection II, 16 April 2012 through 19 April 2012, Brussels; Proc SPIE Int Soc Opt Eng [Details]
Gustafsson, O.; Karim, A.; Berggren, J.; Wang, Q.; Reuterskiöld-Hedlund, C.; Ernerheim-Jokumsen, C.; Soldemo, M.; Weissenrieder, J.; Persson, S.; Almqvist, S.; Ekenberg, U.; Noharet, B.; Asplund, C.; Göthelid, M.; Andersson, J.; Hammar, M. (2012):
Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures.
Optics Express 20: 21264-21271 [Details]
Gustafsson, O.; Berggren, J.; Ekenberg, U.; Hallén, A.; Hammar, M.; Höglund, L.; Karim, A.; Noharet, B.; Wang, Q.; Gromov, A.; Almqvist, S.; Zhang, A.; Junique, S.; Andersson, J.; Asplund, C.; von Würtemberg, R.; Malm, H.; Martijn, H. (2011):
Long-wavelength infrared quantum-dot based interband photodetectors.
Infrared physics & technology 54: 287-291 [Details]
Andersson, J.; Hoglund, L.; Noharet, B.; Wang, Q.; Ericsson, P.; Wissmar, S.; Asplund, C.; Malm, H.; Martijn, H.; Hammar, M.; Gustafsson, O.; Hellström, S.; Radamson, H.; Holtz, P. (2010):
Quantum structure based infrared detector research and development within Acreo's centre of excellence IMAGIC.
Infrared physics & technology 53: 227-230 [Details]
Gustafsson, O.; Höglund, L.; Berggren, J.; Hammar, M. (2009):
GaSb/Ga0.51In0.49P self assembled quantum dots grown by MOVPE.
[Conference paper] EW-MOVPE XIII; Proceedings from EW-MOVPE XIII 273-276 [Details]
Martijn, H.; Asplund, C.; Malm, H.; Smuk, S.; Höglund, L.; Gustafsson, O.; Hammar, M.; Hellström, S. (2009):
Development of IR imaging at IRnova.
[Conference paper] Infrared Technology and Applications XXXV. Orlando, FL. 13 April 2009 - 17 April 2009; Infrared Technology and Applications XXXV [Details]