Publications

[Extracted from DiVA, the publication database at KTH.]

Chen, H.; Montanari, C.; Shanker, R.; Marcinkevičius, S.; Berglund, L.; Sychugov, I. (2022):
Photon Walk in Transparent Wood: Scattering and Absorption in Hierarchically Structured Materials.
Advanced Optical Materials : [Details]
Marcinkevičius, S.; Yapparov, R.; Chow, Y.; Lynsky, C.; Nakamura, S.; DenBaars, S.; Speck, J. (2021):
High internal quantum efficiency of long wavelength InGaN quantum wells.
Applied Physics Letters 119: [Details]
Marcinkevicius, S.; Speck, J. (2021):
Electron-phonon scattering in beta-Ga2O3 studied by ultrafast transmission spectroscopy.
Applied Physics Letters 118: [Details]
Yapparov, R.; Lynsky, C.; Nakamura, S.; Speck, J.; Marcinkevičius, S. (2020):
Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination.
Applied Physics Expres 13: [Details]
Yapparov, R.; Chow, Y.; Lynsky, C.; Wu, F.; Nakamura, S.; Speck, J.; Marcinkevičius, S. (2020):
Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells.
Journal of Applied Physics 128: [Details]
Marcinkevičius, S.; Yapparov, R.; Kuritzky, L.; Wu, Y.; Nakamura, S.; Speck, J. (2020):
Low-temperature carrier transport across InGaN multiple quantum wells - Evidence of ballistic hole transport.
Physical Review B 101: [Details]
Marcinkevičius, S.; Speck, J. (2020):
Ultrafast dynamics of hole self-localization in beta-Ga2O3.
Applied Physics Letters 116: [Details]
Marcinkevičius, S.; Yapparov, R.; Kuritzky, L.; Nakamura, S.; Speck, J. (2019):
Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells.
[Conference paper] Advanced Solid State Lasers, ASSL 2019 - Part of Laser Congress 2019, 29 September 2019 through 3 October 2019; Advanced Solid State Lasers - Proceedings Laser Congress 2019 (ASSL, LAC, LS and C) [Details]
Visser, D.; Yapparov, R.; De Luca, E.; Swillo, M.; Desieres, Y.; Marcinkevicius, S.; Anand, S. (2019):
Top-down fabrication of high quality gallium indium phosphide nanopillar/disk array structures.
[Conference paper] 2019 IEEE 14th NMDC, October 27-30, Stockholm; Proceedings of NMDC 2019 [Details]
Bergmann, M.; Enslin, J.; Yapparov, R.; Hjort, F.; Wickman, B.; Marcinkevičius, S.; Wernicke, T.; Kneissl, M.; Haglund, A. (2019):
Electrochemical etching of AlGaN for the realization of thin-film devices.
Applied Physics Letters 115: [Details]
Marcinkevičius, S.; Yapparov, R.; Kuritzky, L.; Nakamura, S.; Speck, J. (2019):
Impact of barrier height on the interwell carrier transport in InGaN/(In)GaN multiple quantum wells.
[Conference paper] Advanced Solid State Lasers, ASSL_2019, 29 September - 3 October 2019, Vienna, Switzerland; Optics InfoBase Conference Papers [Details]
Marcinkevicius, S.; Yapparov, R.; Kuritzky, L.; Wu, Y.; Nakamura, S.; DenBaars, S.; Speck, J. (2019):
Interwell carrier transport in InGaN/(In)GaN multiple quantum wells.
Applied Physics Letters 114: [Details]
Omanakuttan, G.; Martinez Sacristan, O.; Marcinkevičius, S.; UŽdavinys, T.; Jimenez, J.; Ali, H.; Leifer, K.; Lourdudoss, S.; Sun, Y. (2019):
Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth.
Optical Materials Express 9: 1488-1500 [Details]
Espenlaub, A.; Myers, D.; Young, E.; Marcinkevicius, S.; Weisbuch, C.; Speck, J. (2019):
Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs.
Journal of Applied Physics 126: [Details]
Marcinkevičius, S.; Mensi, M.; Ivanov, R.; Kuritzky, L.; DenBaars, S.; Nakamura, S.; Speck, J. (2018):
Multimode scanning near-field photoluminescence spectroscopy of InGaN quantum wells.
[Conference paper] 1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018; Hilton Sandestin Beach Golf Resort and Spa Mirimar Beach; United States; 22 August 2018 through 24 August 2018; 2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID) 93-95 [Details]
UŽdavinys, T.; Marcinkevicius, S.; Mensi, M.; Lahourcade, L.; Carlin, J.; Martin, D.; Butte, R.; Grandjean, N. (2018):
Impact of surface morphology on the properties of light emission in InGaN epilayers.
Applied Physics Express 11: [Details]
Marcinkevičius, S.; UŽdavinys, T.; Ivanov, R.; Mensi, M. (2018):
Multimode scanning near-field photoluminescence spectroscopy and its application for studies of ingan epitaxial layers and quantum wells.
Lithuanian Journal of Physics 58: 76-89 [Details]
Butte, R.; Lahourcade, L.; UŽdavinys, T.; Callsen, G.; Mensi, M.; Glauser, M.; Rossbach, G.; Martin, D.; Carlin, J.; Marcinkevičius, S.; Grandjean, N. (2018):
Optical absorption edge broadening in thick InGaN layers - Random alloy atomic disorder and growth mode induced fluctuations.
Applied Physics Letters 112: [Details]
Noroozi, M.; Jayakumar, G.; Zahmatkesh, K.; Lu, J.; Hultman, L.; Mensi, M.; Marcinkevicius, S.; Hamawandi, B.; Yakhshi Tafti, M.; Ergül, A.; Ikonic, Z.; Toprak, M.; Radamson, H. (2017):
Unprecedented thermoelectric power factor in SiGe nanowires field-effect transistors.
ECS Journal of Solid State Science and Technology 6: Q114-Q119 [Details]
Ivanov, R.; Marcinkevičius, S.; Mensi, M.; Martinez, O.; Kuritzky, L.; Myers, D.; Nakamura, S.; Speck, J. (2017):
Polarization-Resolved Near-Field Spectroscopy of Localized States in m -Plane InxGa1-x N/Ga N Quantum Wells.
Physical Review Applied 7: [Details]
Uždavinys, T.; Becerra, D.; Ivanov, R.; Denbaars, S.; Nakamura, S.; Speck, J.; Marcinkevicius, S. (2017):
Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence.
Optical Materials Express 7: [Details]
Mounir, M.; Ivanov, R.; Uždavinys, T.; Kelchner, K.; Nakamura, S.; DenBaars, S.; Speck, J.; Marcinkevičius, S. (2017):
Direct measurement of nanoscale lateral carrier diffusion - toward scanning diffusion microscopy.
ACS Photonics : [Details]
Ivanov, R.; Marcinkevičius, S.; UŽdavinys, T.; Kuritzky, L.; Nakamura, S.; Speck, J. (2017):
Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells.
Applied Physics Letters 110: [Details]
Mensi, M.; Becerra, D.; Ivanov, R.; Marcinkevičius, S.; Nakamura, S.; Denbaars, S.; Speck, J. (2016):
Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells.
Optical Materials Express 6: 39-45 [Details]
Marcinkevičius, S.; UŽdavinys, T.; Foronda, H.; Cohen, D.; Weisbuch, C.; Speck, J. (2016):
Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy.
Physical Review B. Condensed Matter and Materials Physics 94: [Details]
Marcinkevičius, S.; Jain, R.; Shatalov, M.; Gaska, R.; Shur, M. (2016):
Scanning near-field optical microscopy of AlGaN epitaxial layers.
[Conference paper] Conference on UV and Higher Energy Photonics - From Materials to Applications, AUG 28-31, 2016, San Diego, CA; UV and Higher Energy Photonics [Details]
Wickramaratne, D.; Shen, J.; Dreyer, C.; Engel, M.; Marsman, M.; Kresse, G.; Marcinkevičius, S.; Alkauskas, A.; Van de Walle, C. (2016):
Iron as a source of efficient Shockley-Read-Hall recombination in GaN.
Applied Physics Letters 109: [Details]
Marcinkevicius, S.; Gelzinyte, K.; Ivanov, R.; Zhao, Y.; Nakamura, S.; DenBaars, S.; Speck, J. (2015):
Spatial variations of optical properties of semipolar InGaN quantum wells.
[Conference paper] Conference on Gallium Nitride Materials and Devices X, February 09-12, 2015, San Francisco, CA; Gallium Nitride Materials and Devices X [Details]
Gelzinyte, K.; Ivanov, R.; Marcinkevicius, S.; Zhao, Y.; Becerra, D.; Nakamura, S.; DenBaars, S.; Speck, J. (2015):
High spatial uniformity of photoluminescence spectra in semipolar (20(2)over-bar1) plane InGaN/GaN quantum wells.
Journal of Applied Physics 117: 023111 [Details]
Ivanov, R.; Marcinkevicius, S.; Zhao, Y.; Becerra, D.; Nakamura, S.; DenBaars, S.; Speck, J. (2015):
Impact of carrier localization on radiative recombination times in semipolar (2021) plane InGaN/GaN quantum wells.
Applied Physics Letters 107: [Details]
Marcinkevicius, S.; Sztein, A.; Nakamura, S.; Speck, J. (2015):
Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure.
Semiconductor Science and Technology 30: [Details]
Marcinkevicius, S.; Jain, R.; Shatalov, M.; Yang, J.; Shur, M.; Gaska, R. (2014):
High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy.
Applied Physics Letters 105: 241108 [Details]
Marcinkevicius, S.; Kelchner, K.; Nakamura, S.; DenBaars, S.; Speck, J. (2014):
Optical properties and carrier dynamics in m-plane InGaN quantum wells.
[Conference paper] 10th International Conference on Nitride Semiconductors (ICNS), AUG 25-30, 2013, Washington, DC, USA; 690-693 [Details]
Marcinkevicius, S.; Gelzinyte, K.; Zhao, Y.; Nakamura, S.; DenBaars, S.; Speck, J. (2014):
Carrier redistribution between different potential sites in semipolar (20(2)over-bar1) InGaN quantum wells studied by near-field photoluminescence.
Applied Physics Letters 105: 111108 [Details]
Marcinkevicius, S.; Ivanov, R.; Zhao, Y.; Nakamura, S.; DenBaars, S.; Speck, J. (2014):
Highly polarized photoluminescence and its dynamics in semipolar (20(2)over-bar(1)over-bar) InGaN/GaN quantum well.
Applied Physics Letters 104: 111113 [Details]
Meiser, N.; Marcinkevicius, S.; Pasiskevicius, V. (2014):
Transient behaviour of quantum-dot saturable absorber mirrors at varying excitation fluence.
Applied physics. B, Lasers and optics (Print) 116: 919-927 [Details]
Marcinkevicius, S.; Kelchner, K.; Kuritzky, L.; Nakamura, S.; DenBaars, S.; Speck, J. (2013):
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells.
Applied Physics Letters 103: 111107 [Details]
Marcinkevičius, S.; Zhao, Y.; Kelchner, K.; Nakamura, S.; Denbaars, S.; Speck, J. (2013):
Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra.
Applied Physics Letters 103: 131116 [Details]
Marcinkevicius, S.; Liuolia, V.; Billingsley, D.; Shatalov, M.; Yang, J.; Gaska, R.; Shur, M. (2013):
Carrier dynamics and localization in AlInN/GaN heterostructures.
Physica Status Solidi. C, Current topics in solid state physics 10: 853-856 [Details]
Marcinkevicius, S.; Kelchner, K.; Nakamura, S.; DenBaars, S.; Speck, J. (2013):
Optical properties of extended and localized states in m-plane InGaN quantum wells.
Applied Physics Letters 102: 101102 [Details]
Naureen, S.; Shahid, N.; Gustafsson, A.; Liuolia, V.; Marcinkevicius, S.; Anand, S. (2013):
Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching.
Applied Physics Letters 102: 212106 [Details]
Marcinkevicius, S.; Liuolia, V.; Billingsley, D.; Shatalov, M.; Yang, J.; Gaska, R.; Shur, M. (2012):
Transient photoreflectance of AlInN/GaN heterostructures.
AIP Advances 2: 042148 [Details]
Thylén, L.; Marcinkevicius, S.; Holmström, P. (2012):
Nanophotonics - A tutorial.
[Conference paper] 2012 17th Opto-Electronics and Communications Conference, OECC 2012, 2 July 2012 through 6 July 2012, Busan; Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 224-225 [Details]
Liuolia, V.; Marcinkevicius, S.; Billingsley, D.; Shatalov, M.; Yang, J.; Gaska, R.; Shur, M. (2012):
Photoexcited carrier dynamics in AlInN/GaN heterostructures.
Applied Physics Letters 100: 242104 [Details]
Pinos, A.; Marcinkevicius, S.; Liuolia, V.; Yang, J.; Gaska, R.; Shur, M. (2012):
Scanning near-field optical spectroscopy of AlGaN epitaxial layers.
Physica Status Solidi. C, Current topics in solid state physics 9: 1617-1620 [Details]
Liuolia, V.; Marcinkevicius, S.; Wang, Q.; Andersson, J.; Kim, S.; Baek, J. (2012):
Near- and far-field optical characterization of InGaN photonic crystal light emitting diodes.
Physica Status Solidi. C, Current topics in solid state physics 9: 1664-1666 [Details]
Pinos, A.; Liuolia, V.; Marcinkevicius, S.; Yang, J.; Gaska, R.; Shur, M. (2011):
Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy.
Journal of Applied Physics 109: [Details]
Pinos, A.; Marcinkevicius, S.; Shur, M. (2011):
High current-induced degradation of AlGaN ultraviolet light emitting diodes.
Journal of Applied Physics 109: 103108 [Details]
Sugunan, A.; Zhao, Y.; Mitra, S.; Dong, L.; Li, S.; Popov, S.; Marcinkevicius, S.; Toprak, M.; Muhammed, M. (2011):
Synthesis of tetrahedral quasi-type-II CdSe-CdS core-shell quantum dots.
Nanotechnology 22: 425202 [Details]
Puustinen, J.; Guina, M.; Korpijärvi, V.; Marcinkevicius, S.; Tukiainen, A.; Kivistö, A.; Pessa, M. (2010):
1.22 µm GaInNAs saturable absorber mirrors with tailored recovery time.
[Conference paper] International Commission for Optics (ICO), Topical Meeting on "Emerging Trends and Novel Materials in Photonics", ICO-Photonics-Delphi2009; Delphi; Greece; 7 October 2009 through 9 October 2009; Emerging trends and novel materials in photonics 200-203 [Details]

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