Publications

[Extracted from DiVA, the publication database at KTH.]

Chacinski, M.; Schatz, R.; Westergren, U.; Berggren, J.; Yu, X.; Marcks Von Würtemberg, R.; Hammar, M. (2009):
Dynamic properties of electrically p-n confined, epitaxially regrown 1.27 μm InGaAs single-mode vertical-cavity surface-emitting lasers.
IET optoelectronics 3: 163-167 [Details]
Marcks von Würtemberg, R.; Yu, X.; Berggren, J.; Hammar, M. (2009):
Performance optimisation of epitaxially regrown 1.3-μm vertical-cavity surface-emitting lasers.
IET Optoelectronics 3: 112-121 [Details]
Marcks von Würtemberg, R.; Berggren, J.; Dainese, M.; Hammar, M. (2008):
High-power InGaAs/GaAs 1.3 mu m VCSELs based on novel electrical confinement scheme - Erratum.
Electronics Letters 44: [Details]
Marcks von Würtemberg, R. (2008):
Design and fabrication of long wavelength vertical cavity lasers on GaAs substrates.
Doctoral thesis, comprehensive summary [Details]
Marcks von Würtemberg, R.; Berggren, J.; Dainese, M.; Hammar, M. (2008):
High-power InGaAs/GaAs 1.3 μm VCSELs based on novel electrical confinement scheme.
Electronics Letters 44: 414-416 [Details]
Zhang, Z.; Marcks von Würtemberg, R.; Berggren, J.; Hammar, M. (2007):
Optical loss and interface morphology in AlGaAs/GaAs distributed Bragg reflectors.
Applied Physics Letters 91: 101101 [Details]
Marcks von Würtemberg, R.; Zhang, Z.; Berggren, J.; Hammar, M. (2006):
A novel electrical and optical confinement scheme for surface emitting optoelectronic devices.
[Conference paper] Workshop on Optical Components for Broadband Communication. Stockholm, SWEDEN. JUN 28-29, 2006; WORKSHOP ON OPTICAL COMPONENTS FOR BROADBAND COMMUNICATION 63500J-1-63500J-10 [Details]
Hammar, M.; von Würtemberg, R.; Sundgren, P.; Berggren, J.; Larsson, A.; Söderberg, E.; Modh, P.; Gustavsson, J.; Ghisoni, M.; Chitica, N. (2005):
1.3-mu m InGaAs vertical-cavity surface-emitting lasers.
[Conference paper] 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society Location: Sydney, AUSTRALIA Date: OCT 22-28, 2005; 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) 396-397 [Details]
Chacinski, M.; Schatz, R.; Kjebon, O.; Hammar, M.; Marcks von Würtemberg, R.; Mogg, S.; Sundgren, P.; Berggren, J. (2005):
Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics.
Applied Physics Letters 86: 211109-1-211109-3 [Details]
Marcks von Würtemberg, R.; Sundgren, P.; Berggren, J.; Hammar, M.; Ghisoni, M.; Ödling, E.; Oscarsson, V.; Malmquist, J. (2004):
1.3 μm InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation.
Applied Physics Letters 85: 4851-4853 [Details]
Chacinski, M.; Berggren, J.; Schatz, R.; Kjebon, O.; Hammar, M.; Sundgren, P.; Marcks von Würtemberg, R. (2004):
1.3 um InGaAs VCSELs: Influence of the Large Gain-Cavity Detuning on the Modulation and Static Performance.
[Conference paper] European Conference on Optical Communication; Proc. of 30th European Conference on Optical Communication 2004 [Details]
Marcks von Würtemberg, R.; Sundgren, P.; Berggren, J.; Hammar, M.; Ghisoni, M.; Oscarsson, V.; Ödling, E.; Malmquist, J. (2004):
Fabrication and performance of 1.3-μm vertical cavity surface emitting lasers with InGaAs quantum well active regions grown on GaAs substrates.
Proceedings of SPIE, the International Society for Optical Engineering 5443: 229-239 [Details]
Sundgren, P.; Marcks von Würtemberg, R.; Berggren, J.; Hammar, M.; Ghisoni, M.; Oscarsson, V.; Ödling, E.; Malmquist, J. (2003):
High-performance 1.3-μm InGaAs vertical cavity surface emitting lasers.
Electronics Letters 39: 1128-1129 [Details]