Publications

[Extracted from DiVA, the publication database at KTH.]

Hammar, M.; Hallén, A.; Lourdudoss, S. (2022):
Compound Semiconductors.
Physica Status Solidi (a) applications and materials science 219: [Details]
Khartsev, S.; Hammar, M.; Nordell, N.; Zolotarjovs, A.; Purans, J.; Hallén, A. (2021):
Reverse‐Bias Electroluminescence in Er‐Doped β‐Ga 2 O 3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition.
Physica Status Solidi (a) applications and materials science 219: 2100610-2100610 [Details]
Rwegasira, D.; Ben Dhaou, I.; Ebrahimi, M.; Hallén, A.; Mvungi, N.; Tenhunen, H. (2021):
Energy trading and control of islanded DC microgrid using multi-agent systems.
Multiagent and Grid Systems 17: 113-128 [Details]
Ayedh, H.; Kvamsdal, K.; Bobal, V.; Hallén, A.; Ling, F.; Kuznetsov, A. (2021):
Carbon vacancy control in p(+)-n silicon carbide diodes for high voltage bipolar applications.
Journal of Physics D 54: [Details]
Linnarsson, M.; Vines, L.; Hallén, A. (2021):
Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC.
Journal of Applied Physics 130: [Details]
Hammar, M.; Hallén, A.; Lourdudoss, S. (2021):
Compound Semiconductors.
Physica status solidi. B, Basic research 258: [Details]
Khelidj, H.; Portavoce, A.; Bertoglio, M.; Descoins, M.; Patout, L.; Hoummada, K.; Hallén, A.; Charaï, A.; Benoudia, M.; Mangelinck, D. (2021):
Ge(Sn) growth on Si(001) by magnetron sputtering.
Materials Today Communications 26: [Details]
Usman, M.; Abbas, T.; Awais, A.; Hallén, A. (2021):
Comparative study of proton and helium elastic scatterings from nitrogen in GaN.
Materials Science in Semiconductor Processing 121: [Details]
Johannesson, D.; Nawaz, M.; Norrga, S.; Hallén, A.; Nee, H. (2021):
Static and Dynamic Performance Prediction of Ultra-High-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors.
IEEE transactions on power electronics 36: 5874-5891 [Details]
Khartsev, S.; Nordell, N.; Hammar, M.; Purans, J.; Hallén, A. (2020):
High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition.
Physica status solidi. B, Basic research 258: 2000362-2000362 [Details]
Johannesson, D.; Jacobs, K.; Norrga, S.; Hallén, A.; Nawaz, M.; Nee, H. (2020):
Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model.
[Conference paper] 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019); Materials Science Forum 911-916 [Details]
Linnarsson, M.; Hallén, A.; Vines, L. (2020):
Intentional and unintentional channeling during implantation of p-dopants in 4h-sic.
[Conference paper] Materials Science Forum Vol. 1004, 29 September 2019 through 4 October 2019; Materials Science Forum 689-697 [Details]
Azarov, A.; Galeckas, A.; Mieszczyński, C.; Hallén, A.; Kuznetsov, A. (2020):
Effects of annealing on photoluminescence and defect interplay in ZnO bombarded by heavy ions - Crucial role of the ion dose.
Journal of Applied Physics 127: [Details]
Tia, K.; Xia, J.; Elgammal, K.; Schoner, A.; Kaplan, W.; Karhu, R.; Ul-Hassan, J.; Hallén, A. (2020):
Modelling the static on-state current voltage characteristics for a 10 kV 4H-SiC PiN diode.
Materials Science in Semiconductor Processing 115: [Details]
Tian, K.; Hallén, A.; Qi, J.; Nawaz, M.; Ma, S.; Wang, M.; Guo, S.; Elgammal, K.; Li, A.; Liu, W. (2019):
Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature.
IEEE Transactions on Electron Devices 66: 4279-4286 [Details]
Hallén, A.; Linnarsson, M.; Vines, L. (2019):
Recent advances in the doping of 4H-SiC by channeling ion implantation.
[Conference paper] 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018; Birmingham; United Kingdom; 2 September 2018 through 6 September 2018; Silicon Carbide and Related Materials 2018 375-381 [Details]
Linnarsson, M.; Hallén, A.; Vines, L. (2019):
Influence of a thin amorthous layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC.
Applied Physics A 125: [Details]
Linnarsson, M.; Hallén, A.; Vines, L. (2019):
Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC.
Semiconductor Science and Technology 34: 1-10 [Details]
Linnarsson, M.; Hallén, A.; Vines, L.; Svensson, B. (2019):
Channeling implantations of p-type dopants into 4H-SiC at different tempertures.
Materials Science Forum 963: 382-385 [Details]
Majdi, S.; Gabrysch, M.; Suntornwipat, N.; Burmeister, F.; Jonsson, R.; Kovi, K.; Hallén, A. (2019):
High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors.
Review of Scientific Instruments 90: [Details]
Tian, K.; Hallén, A.; Qi, J.; Ma, S.; Fei, X.; Zhang, A.; Liu, W. (2019):
An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss.
IEEE Transactions on Electron Devices 66: 2307-2313 [Details]
Azarov, A.; Aarseth, B.; Vines, L.; Hallén, A.; Monakhov, E.; Kuznetsov, A. (2019):
Defect annealing kinetics in ZnO implanted with Zn substituting elements - Zn interstitials and Li redistribution.
Journal of Applied Physics 125: [Details]
Woerle, J.; Prokscha, T.; Hallén, A.; Grossner, U. (2019):
Interaction of low-energy muons with defect profiles in proton-irradiated Si and 4H-SiC.
Physical Review B 100: [Details]
Linnarsson, M.; Ayedh, H.; Hallén, A.; Vines, L.; Svensson, B. (2018):
Surface erosion of ion-implanted 4H-SiC during annealing with carbon cap.
[Conference paper] International Conference on Silicon Carbide and Related Materials, ICSCRM 2017; Columbia; United States; 17 September 2017 through 22 September 2017; International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 373-376 [Details]
Hallén, A.; Suvanam, S. (2018):
Radiation hardness for silicon oxide and aluminum oxide on 4H-SiC.
[Conference paper] International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, United States, 17 September 2017 through 22 September 2017; International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 229-232 [Details]
Ayedh, H.; Nipoti, R.; Hallén, A.; Svensson, B. (2018):
Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC.
[Conference paper] 17 September 2017 through 22 September 2017; International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 233-236 [Details]
Chulapakorn, T.; Sychugov, I.; Ottosson, M.; Primetzhofer, D.; Moro, M.; Linnros, J.; Hallén, A. (2018):
Luminescence of silicon nanoparticles from oxygen implanted silicon.
Materials Science in Semiconductor Processing 86: 18-22 [Details]
Chulapakorn, T.; Primetzhofer, D.; Sychugov, I.; Suvanam, S.; Linnros, J.; Hallén, A. (2018):
Impact of H-uptake by forming gas annealing and ion implantation on photoluminescence of Si-nanoparticles.
Physica Status Solidi (a) applications and materials science 215: [Details]
Suvanam, S.; Larsen, J.; Ross, N.; Kosyak, V.; Hallén, A.; Björkman, C. (2018):
Extreme radiation hard thin film CZTSSe solar cell.
Solar Energy Materials and Solar Cells 185: 16-20 [Details]
Luo, T.; Mangelinck, D.; Descoins, M.; Bertoglio, M.; Mouaici, N.; Hallén, A.; Girardeaux, C. (2018):
Combined effect of Pt and Walloying elements on Ni-silicide formation.
Journal of Applied Physics 123: [Details]
Usman, M.; Suvanam, S.; Linnarsson, M.; Hallén, A. (2018):
Improving the quality of Al2O3/4H-SiC interface for device applications.
Materials Science in Semiconductor Processing 81: 118-121 [Details]
Suvanam, S.; Usman, M.; Martin, D.; Yazdi, M.; Linnarsson, M.; Tempez, A.; Göthelid, M.; Hallén, A. (2018):
Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC.
Applied Surface Science 433: 108-115 [Details]
Ayedh, H.; Bathen, M.; Galeckas, A.; Hassan, J.; Bergman, J.; Nipoti, R.; Hallén, A.; Svensson, B. (2018):
Controlling the carbon vacancy in 4H-SiC by thermal processing.
[Conference paper] Symposium on Gallium Nitride and Silicon Carbide Power Technologies 8 - AiMES 2018, ECS and SMEQ Joint International Meeting, 30 September 2018 through 4 October 2018; ECS Transactions 91-97 [Details]
Chulapakorn, T.; Sychugov, I.; Suvanam, S.; Linnros, J.; Primetzhofer, D.; Hallén, A. (2017):
Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2.
Nanotechnology 28: [Details]
Linnarsson, M.; Hallén, A.; Khartsev, S.; Suvanam, S.; Usman, M. (2017):
Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering.
Journal of Physics D 50: [Details]
Ayedh, H.; Iwamoto, N.; Nipoti, R.; Hallén, A.; Svensson, B. (2017):
Formation of D-Center in p-type 4H-SiC epi-layers during high temperature treatments.
[Conference paper] 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Halkidiki, Greece, 25 September 2016 through 29 September 2016; 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 262-265 [Details]
Ayedh, H.; Nipoti, R.; Hallén, A.; Svensson, B. (2017):
Thermodynamic equilibration of the carbon vacancy in 4H-SiC - A lifetime limiting defect.
Journal of Applied Physics 122: [Details]
Zetterling, C.; Hallén, A.; Hedayati, R.; Kargarrazi, S.; Lanni, L.; Malm, B.; Mardani, S.; Norström, H.; Rusu, A.; Suvanam, S.; Tian, Y.; Östling, M. (2017):
Bipolar integrated circuits in SiC for extreme environment operation.
Semiconductor Science and Technology 32: [Details]
Azarov, A.; Rauwel, P.; Hallén, A.; Monakhov, E.; Svensson, B. (2017):
Extended defects in ZnO - Efficient sinks for point defects.
Applied Physics Letters 110: [Details]
Suvanam, S.; Lanni, L.; Malm, B.; Zetterling, C.; Hallén, A. (2017):
Total Dose Effects on 4H-SiC Bipolar Junction Transistors.
[Conference paper] European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM-16); [Details]
Rubel, M.; Moon, S.; Petersson, P.; Garcia Carrasco, A.; Hallén, A.; Krawczynska, A.; Fortuna-Zalesna, E.; Gilbert, M.; Plocinski, T.; Widdowson, A. (2017):
Metallic mirrors for plasma diagnosis in current and future reactors - tests for ITER and DEMO.
Physica Scripta T170: [Details]
Usman, M.; Suvanam, S.; Yazdi, M.; Göthelid, M.; Sultan, M.; Hallén, A. (2016):
Stoichiometry of the ALD-Al2O3/4H-SiC interface by synchrotron-based XPS.
Journal of Physics D 49: [Details]
Issa, F.; Vervisch, V.; Ottaviani, L.; Szalkai, D.; Vermeeren, L.; Lyoussi, A.; Kuznetsov, A.; Lazar, M.; Klix, A.; Palais, O.; Hallén, A. (2016):
Improvements in Realizing 4H-SiC Thermal Neutron Detectors.
[Conference paper] 15th International Symposium on Reactor Dosimetry (ISRD), MAY 18-23, 2014, Aix en Provence, FRANCE; ISRD 15 - INTERNATIONAL SYMPOSIUM ON REACTOR DOSIMETRY [Details]
Chulapakorn, T.; Sychugov, I.; Suvanam, S.; Linnros, J.; Primetzhofer, D.; Hallén, A. (2016):
MeV ion irradiation effects on the luminescence properties of Si-implanted SiO2-thin films.
Physica Status Solidi (C) Current Topics in Solid State Physics 13: 921-926 [Details]
Ayedh, H.; Bobal, V.; Nipoti, R.; Hallén, A.; Svensson, B. (2016):
Formation and annihilation of carbon vacancies in 4H-SiC.
[Conference paper] 4 October 2015 through 9 October 2015; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 331-336 [Details]
Linnarsson, M.; Suvanam, S.; Vines, L.; Hallén, A. (2016):
Alkali metal re-distribution after oxidation of 4H-SiC.
[Conference paper] 4 October 2015 through 9 October 2015; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 677-680 [Details]
Suvanam, S.; Yazdi, G.; Usman, M.; Götelid, M.; Hallén, A. (2016):
Interface analysis of p-type 4H-SiC/Al2O3 using synchrotron-based XPS.
[Conference paper] 4 October 2015 through 9 October 2015; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 693-696 [Details]
Ayedh, H.; Nipoti, R.; Hallén, A.; Svensson, B. (2016):
Controlling the carbon vacancy concentration in 4H-SiC subjected to high temperature treatment.
[Conference paper] 4 October 2015 through 9 October 2015; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 414-417 [Details]
Karlsson, L.; Hallen, A.; Birch, J.; Hultman, L.; Persson, P. (2016):
Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC.
Materials letters (General ed.) 181: 325-327 [Details]
Suvanam, S.; Kuroki, S.; Lanni, L.; Hadayati, R.; Ohshima, T.; Makino, T.; Hallén, A.; Zetterling, C. (2016):
High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits.
IEEE Transactions on Nuclear Science : [Details]

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